Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A VISHAY
Product Code: SI4447DY-T1-GE3
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Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -4.5A; Idm: -30A
Supplier parameters
Product code
SI4447DY-T1-GE3
Supplier's product code
SI4447DY-T1-GE3
Product ID
U-3127377
Case
SO8
Drain current
-4.5A
Drain-source voltage
-40V
Gate charge
14nC
Gate-source voltage
±16V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
72mΩ
Polarisation
unipolar
Power dissipation
2W
Pulsed drain current
-30A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
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