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Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 VISHAY

Product Code: SQ2361AEES-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23 VISHAY

Specifications

SKU
U-3807139
Brand
Product code
SQ2361AEES-T1-GE3

Supplier product description

Transistor: P-MOSFET; unipolar; -60V; -2.8A; Idm: -11A; 0.67W; SOT23

Supplier parameters

Product code
SQ2361AEES-T1-GE3
Application
automotive industry
Case
SOT23
Drain current
-2.8A
Drain-source voltage
-60V
Features of semiconductor devices
ESD protected gate
Gate charge
15nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
315mΩ
Polarisation
unipolar
Power dissipation
0.67W
Pulsed drain current
-11A
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SQ2361AEES-T1-GE3
Product ID
U-3807139
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .