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Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 VISHAY

Product Code: SI2365EDS-T1-GE3
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Price range

AmountPrice with tax (pcs)
1-9
€0.55
10-24
€0.40
25-49
€0.32
50-99
€0.26
100+
€0.21
wholesale

Min. qty: 1

Multiplier: 1

Total:

€0.55
2024-10-11 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23 VISHAY

Specifications

SKU
U-3121220
Brand
Product code
SI2365EDS-T1-GE3

Supplier product description

Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -20A; 1.1W; SOT23

Supplier parameters

Product code
SI2365EDS-T1-GE3
Case
SOT23
Drain current
-4.5A
Drain-source voltage
-20V
Features of semiconductor devices
ESD protected gate
Gate charge
36nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
32mΩ
Polarisation
unipolar
Power dissipation
1.1W
Pulsed drain current
-20A
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SI2365EDS-T1-GE3
Product ID
U-3121220
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .