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Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23 VISHAY

Product Code: SI2301BDS-T1-GE3
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Price range

AmountPrice with tax (pcs)
1-9
€0.67
10-24
€0.56
25-99
€0.49
100-249
€0.41
250+
€0.33
wholesale

Min. qty: 1

Multiplier: 1

Total:

€0.67
2024-10-14 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23 VISHAY

Specifications

SKU
U-3822485
Brand
Product code
SI2301BDS-T1-GE3

Supplier product description

Transistor: P-MOSFET; unipolar; -20V; -2.2A; Idm: -10A; 0.45W; SOT23

Supplier parameters

Product code
SI2301BDS-T1-GE3
Case
SOT23
Drain current
-2.2A
Drain-source voltage
-20V
Gate charge
10nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
0.45W
Pulsed drain current
-10A
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SI2301BDS-T1-GE3
Product ID
U-3822485
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .