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Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.8W; SC70; ESD VISHAY

Product Code: SI1401EDH-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.8W; SC70; ESD VISHAY

Specifications

SKU
U-3825385
Brand
Product code
SI1401EDH-T1-GE3

Supplier product description

Transistor: P-MOSFET; unipolar; -12V; -4A; Idm: -25A; 1.8W; SC70; ESD

Supplier parameters

Product ID
U-3825385
#Promotion
aac_202202
Case
SC70
Drain current
-4A
Drain-source voltage
-12V
Gate charge
36nC
Gate-source voltage
±10V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
34mΩ
Polarisation
unipolar
Power dissipation
1.8W
Pulsed drain current
-25A
Type of transistor
P-MOSFET
Unit price
No
Version
ESD
Product code
SI1401EDH-T1-GE3
Brand
VISHAY
Supplier's product code
SI1401EDH-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .