Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A VISHAY
Product Code: SI2387DS-T1-GE3
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Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -80V; -3A; Idm: -10A
Supplier parameters
Product code
SI2387DS-T1-GE3
Supplier's product code
SI2387DS-T1-GE3
Product ID
U-3822835
Case
SOT23
Drain current
-3A
Drain-source voltage
-80V
Gate charge
10.2nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
242mΩ
Polarisation
unipolar
Power dissipation
2.5W
Pulsed drain current
-10A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
Brand
VISHAY
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