Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A VISHAY
Product Code: SI3127DV-T1-GE3
Brand
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Supplier product description
Transistor: P-MOSFET; TrenchFET®; unipolar; -60V; -5.1A; Idm: -20A
Supplier parameters
Product code
SI3127DV-T1-GE3
Brand
VISHAY
Supplier's product code
SI3127DV-T1-GE3
Product ID
U-3126032
#Promotion
aac_202202
Case
TSOP6
Drain current
-5.1A
Drain-source voltage
-60V
Gate charge
30nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
89mΩ
Polarisation
unipolar
Power dissipation
2.7W
Pulsed drain current
-20A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
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