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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A VISHAY

Product Code: SQ3419EV-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A VISHAY

Specifications

SKU
U-3126050
Brand
Product code
SQ3419EV-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -6.9A; Idm: -27A

Supplier parameters

Application
automotive industry
Case
TSOP6
Drain current
-6.9A
Drain-source voltage
-40V
Gate charge
11.3nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
86mΩ
Polarisation
unipolar
Power dissipation
1.6W
Pulsed drain current
-27A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Product code
SQ3419EV-T1-GE3
Brand
VISHAY
Supplier's product code
SQ3419EV-T1-GE3
Product ID
U-3126050
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .