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Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A VISHAY

Product Code: SI2319DDS-T1-GE3
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Price range

AmountPrice with tax (pcs)
1-2
€0.65€0.65
3-9
€0.53
10-24
€0.45
25-99
€0.40
100+
€0.35
wholesale

Min. qty: 1

Multiplier: 1

Total:

€0.65
2024-11-22 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A VISHAY

Specifications

SKU
U-3721316
Brand
Product code
SI2319DDS-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -40V; -3.6A; Idm: -15A

Supplier parameters

Product code
SI2319DDS-T1-GE3
Product ID
U-3721316
Brand
VISHAY
Supplier's product code
SI2319DDS-T1-GE3
Case
SOT23
Drain current
-3.6A
Drain-source voltage
-40V
Gate charge
19nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.1Ω
Polarisation
unipolar
Power dissipation
1.7W
Pulsed drain current
-15A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Unit price
No
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