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Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A VISHAY

Product Code: SI3433CDV-T1-GE3
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Product description

Brand
Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A VISHAY

Specifications

SKU
U-3825399
Brand
Product code
SI3433CDV-T1-GE3

Supplier product description

Transistor: P-MOSFET; TrenchFET®; unipolar; -20V; -6A; Idm: -20A

Supplier parameters

Product code
SI3433CDV-T1-GE3
Product ID
U-3825399
Case
TSOP6
Drain current
-6A
Drain-source voltage
-20V
Gate charge
45nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
38mΩ
Polarisation
unipolar
Power dissipation
2.1W
Pulsed drain current
-20A
Technology
TrenchFET®
Type of transistor
P-MOSFET
Brand
VISHAY
Supplier's product code
SI3433CDV-T1-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .