Transistor: P-MOSFET; unipolar; -100V; -2.6A; Idm: -10.4A; 3.1W PanJit Semiconductor
Product Code: PJW3P10A-R2
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Product description
Transistor: P-MOSFET; unipolar; -100V; -2.6A; Idm: -10.4A; 3.1W PanJit Semiconductor
Specifications
SKU
U-3139409
Product code
PJW3P10A-R2
Supplier product description
Transistor: P-MOSFET; unipolar; -100V; -2.6A; Idm: -10.4A; 3.1W
Supplier parameters
Product code
PJW3P10A-R2
Supplier's product code
PJW3P10A-R2
Product ID
U-3139409
Case
SOT223
Drain current
-2.6A
Drain-source voltage
-100V
Gate charge
20nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
PanJit Semiconductor
Mounting
SMD
On-state resistance
0.23Ω
Polarisation
unipolar
Power dissipation
3.1W
Pulsed drain current
-10.4A
Type of transistor
P-MOSFET
Unit price
No
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