Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A VISHAY
Product Code: SI1902DL-T1-GE3
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Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 20V; 660mA; Idm: 1A
Useful information
Supplier parameters
Product code
SI1902DL-T1-GE3
Supplier's product code
SI1902DL-T1-GE3
Product ID
U-2961379
Case
SC70
Drain current
0.66A
Drain-source voltage
20V
Gate charge
0.8nC
Gate-source voltage
±12V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
0.63Ω
Polarisation
unipolar
Power dissipation
0.27W
Pulsed drain current
1A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
Unit price
No
Brand
VISHAY
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