Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A
Product Code: 2N7002BKS.115
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Product description
Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A
Useful information
Specifications
SKU
U-80224
Product code
2N7002BKS.115
Supplier product description
Transistor: N-MOSFET x2; Trench; unipolar; 60V; 0.215A; Idm: 1.2A
Useful information
Supplier parameters
Product code
2N7002BKS.115
Supplier's product code
2N7002BKS.115
Product ID
U-80224
Case
SOT363
Drain current
0.215A
Drain-source voltage
60V
Features of semiconductor devices
ESD protected gate
Gate charge
0.6nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
2Ω
Polarisation
unipolar
Power dissipation
445mW
Pulsed drain current
1.2A
Technology
Trench
Type of transistor
N-MOSFET x2
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