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Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8 ONSEMI

Product Code: ECH8657-TL-H
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Product description

Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8 ONSEMI

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Specifications

SKU
U-2206712
Product code
ECH8657-TL-H

Supplier product description

Transistor: N-MOSFET x2; unipolar; 35V; 4.5A; Idm: 30A; 1.5W; ECH8

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Supplier parameters

Product code
ECH8657-TL-H
Brand
ON SEMICONDUCTOR
Supplier's product code
ECH8657-TL-H
Product ID
U-2206712
Case
ECH8
Drain current
4.5A
Drain-source voltage
35V
Features of semiconductor devices
ESD protected gate
Gate charge
4.6nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
59mΩ
Polarisation
unipolar
Power dissipation
1.5W
Pulsed drain current
30A
Type of transistor
N-MOSFET x2
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .