Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 PanJit Semiconductor
Product Code: PJT7800-R1
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Product description
Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 PanJit Semiconductor
Specifications
SKU
U-3139406
Product code
PJT7800-R1
Supplier product description
Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Supplier parameters
Product code
PJT7800-R1
Supplier's product code
PJT7800-R1
Product ID
U-3139406
Case
SOT363
Drain current
1A
Drain-source voltage
20V
Gate charge
1.6nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
PanJit Semiconductor
Mounting
SMD
On-state resistance
0.4Ω
Polarisation
unipolar
Power dissipation
0.35W
Pulsed drain current
4A
Type of transistor
N-MOSFET x2
Unit price
No
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