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Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363 DIODES INCORPORATED

Product Code: DMN3190LDWQ-7
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Product description

Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363 DIODES INCORPORATED

Specifications

SKU
U-2876176
Product code
DMN3190LDWQ-7

Supplier product description

Transistor: N-MOSFET x2; unipolar; 30V; 1A; Idm: 2A; 250mW; SOT363

Supplier parameters

Product code
DMN3190LDWQ-7
Application
automotive industry
Case
SOT363
Drain current
1A
Drain-source voltage
30V
Gate charge
2nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
DIODES INCORPORATED
Mounting
SMD
On-state resistance
335mΩ
Polarisation
unipolar
Power dissipation
0.25W
Pulsed drain current
2A
Type of transistor
N-MOSFET x2
Unit price
No
Brand
DIODES INCORPORATED
Supplier's product code
DMN3190LDWQ-7
Product ID
U-2876176
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .