Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW VISHAY
Product Code: SI2318DS-T1-E3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 3A; Idm: 16A; 750mW
Useful information
Supplier parameters
Product code
SI2318DS-T1-E3
Brand
VISHAY
Supplier's product code
SI2318DS-T1-E3
Product ID
U-2961380
Case
SOT23
Drain current
3A
Drain-source voltage
40V
Gate charge
10nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
58mΩ
Polarisation
unipolar
Power dissipation
0.75W
Pulsed drain current
16A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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