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Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A VISHAY

Product Code: SUG90090E-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A VISHAY

Specifications

SKU
U-3116618
Brand
Product code
SUG90090E-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 100A; Idm: 300A

Supplier parameters

Product code
SUG90090E-GE3
Case
TO247
Drain current
100A
Drain-source voltage
200V
Gate charge
129nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
10.4mΩ
Polarisation
unipolar
Power dissipation
395W
Pulsed drain current
300A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SUG90090E-GE3
Product ID
U-3116618
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