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Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A VISHAY

Product Code: SQD100N04-3M6L-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A VISHAY

Specifications

SKU
U-3116586
Brand
Product code
SQD100N04-3M6L-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A

Supplier parameters

Product code
SQD100N04-3M6L-GE3
Brand
VISHAY
Supplier's product code
SQD100N04-3M6L-GE3
Product ID
U-3116586
Case
TO252
Drain current
100A
Drain-source voltage
40V
Gate charge
130nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
7mΩ
Polarisation
unipolar
Power dissipation
136W
Pulsed drain current
400A
Technology
TrenchFET®
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .