Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A VISHAY
Product Code: SIZ250DT-T1-GE3
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Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 60V; 38A; Idm: 80A
Supplier parameters
Product code
SIZ250DT-T1-GE3
Brand
VISHAY
Supplier's product code
SIZ250DT-T1-GE3
Product ID
U-3116542
Drain current
38A
Drain-source voltage
60V
Gate charge
21nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
18.87/18.11mΩ
Polarisation
unipolar
Power dissipation
33W
Pulsed drain current
80A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
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