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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 55.9A; Idm: 120A
Supplier parameters
Product code
SISS5108DN-T1-GE3
Drain current
55.9A
Drain-source voltage
100V
Gate charge
23nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
12.4mΩ
Polarisation
unipolar
Power dissipation
65.7W
Pulsed drain current
120A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
Brand
VISHAY
Supplier's product code
SISS5108DN-T1-GE3
Product ID
U-3116533
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