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Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W VISHAY

Product Code: SISS30LDN-T1-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W VISHAY

Specifications

SKU
U-3046225
Brand
Product code
SISS30LDN-T1-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 44A; Idm: 120A; 36W

Supplier parameters

Case
PowerPAK® 1212-8
Drain current
44A
Drain-source voltage
80V
Gate charge
50nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
12.2mΩ
Polarisation
unipolar
Power dissipation
36W
Pulsed drain current
120A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
Product code
SISS30LDN-T1-GE3
Brand
VISHAY
Supplier's product code
SISS30LDN-T1-GE3
Product ID
U-3046225
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .