Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W VISHAY
Product Code: SISH114ADN-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 35A; Idm: 60A; 25W
Supplier parameters
Product code
SISH114ADN-T1-GE3
Brand
VISHAY
Supplier's product code
SISH114ADN-T1-GE3
Product ID
U-3046196
Case
PowerPAK® 1212-8
Drain current
35A
Drain-source voltage
30V
Gate charge
32nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
9.8mΩ
Polarisation
unipolar
Power dissipation
25W
Pulsed drain current
60A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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