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Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A VISHAY

Product Code: SISF00DN-T1-GE3
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Product description

Brand
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A VISHAY

Specifications

SKU
U-3046188
Brand
Product code
SISF00DN-T1-GE3

Supplier product description

Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 60A; Idm: 120A

Supplier parameters

Case
PowerPAK® 1212-8
Drain current
60A
Drain-source voltage
30V
Gate charge
53nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
7mΩ
Polarisation
unipolar
Power dissipation
44.4W
Pulsed drain current
120A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
Unit price
No
Product code
SISF00DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISF00DN-T1-GE3
Product ID
U-3046188
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .