Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A VISHAY
Product Code: SISB46DN-T1-GE3
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Supplier product description
Transistor: N-MOSFET x2; TrenchFET®; unipolar; 40V; 27.3A; Idm: 70A
Supplier parameters
Product code
SISB46DN-T1-GE3
Brand
VISHAY
Supplier's product code
SISB46DN-T1-GE3
Product ID
U-3046186
Case
PowerPAK® 1212-8
Drain current
27.3A
Drain-source voltage
40V
Gate charge
22nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
15.8mΩ
Polarisation
unipolar
Power dissipation
14.8W
Pulsed drain current
70A
Technology
TrenchFET®
Type of transistor
N-MOSFET x2
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