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Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A VISHAY

Product Code: SIRA90DP-T1-GE3
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Brand

Price range

AmountPrice with tax (pcs)
1-4
€1.75€1.75
5-24
€1.58
25-99
€1.39
100-499
€1.26
500+
€1.18
wholesale

Min. qty: 1

Multiplier: 1

Total:

€1.75
2024-11-11 Estimated delivery

*Total delivery cost will be calculated in the checkout.

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Warehouse in Europe

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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A VISHAY

Specifications

SKU
U-3046128
Brand
Product code
SIRA90DP-T1-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 100A; Idm: 400A

Supplier parameters

Product code
SIRA90DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRA90DP-T1-GE3
Product ID
U-3046128
Case
PowerPAK® SO8
Drain current
100A
Drain-source voltage
30V
Gate charge
153nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.15mΩ
Polarisation
unipolar
Power dissipation
66.6W
Pulsed drain current
400A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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