Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W VISHAY
Product Code: SIRA88BDP-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 32A; Idm: 90A; 11W
Supplier parameters
Product code
SIRA88BDP-T1-GE3
Brand
VISHAY
Supplier's product code
SIRA88BDP-T1-GE3
Product ID
U-3046126
Case
PowerPAK® SO8
Drain current
32A
Drain-source voltage
30V
Gate charge
19nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
10.5mΩ
Polarisation
unipolar
Power dissipation
11W
Pulsed drain current
90A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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