Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A VISHAY
Product Code: SIRA50DP-T1-RE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A
Supplier parameters
Product code
SIRA50DP-T1-RE3
Brand
VISHAY
Supplier's product code
SIRA50DP-T1-RE3
Product ID
U-3046114
Case
PowerPAK® SO8
Drain current
100A
Drain-source voltage
40V
Gate charge
194nC
Gate-source voltage
-16...20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.45mΩ
Polarisation
unipolar
Power dissipation
64W
Pulsed drain current
400A
Technology
TrenchFET®
Type of transistor
N-MOSFET
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