Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A VISHAY
Product Code: SIR876BDP-T1-RE3
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 100V; 51.4A; Idm: 120A
Supplier parameters
Product code
SIR876BDP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR876BDP-T1-RE3
Product ID
U-3116527
Case
PowerPAK® SO8
Drain current
51.4A
Drain-source voltage
100V
Gate charge
65nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
12.3mΩ
Polarisation
unipolar
Power dissipation
71.4W
Pulsed drain current
120A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
