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Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A VISHAY

Product Code: SIR638DP-T1-GE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A VISHAY

Specifications

SKU
U-3116489
Brand
Product code
SIR638DP-T1-GE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 40V; 100A; Idm: 400A

Supplier parameters

Product code
SIR638DP-T1-GE3
Case
PowerPAK® SO8
Drain current
100A
Drain-source voltage
40V
Gate charge
204nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.16mΩ
Polarisation
unipolar
Power dissipation
104W
Pulsed drain current
400A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SIR638DP-T1-GE3
Product ID
U-3116489
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