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Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A VISHAY

Product Code: SIR624DP-T1-RE3
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Product description

Brand
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A VISHAY

Specifications

SKU
U-3116484
Brand
Product code
SIR624DP-T1-RE3

Supplier product description

Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 18.6A; Idm: 50A

Supplier parameters

Product code
SIR624DP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR624DP-T1-RE3
Product ID
U-3116484
Case
PowerPAK® SO8
Drain current
18.6A
Drain-source voltage
200V
Gate charge
30nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
64mΩ
Polarisation
unipolar
Power dissipation
52W
Pulsed drain current
50A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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