Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A VISHAY
Product Code: SIR616DP-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 20.2A; Idm: 50A
Supplier parameters
Product code
SIR616DP-T1-GE3
Brand
VISHAY
Supplier's product code
SIR616DP-T1-GE3
Product ID
U-3116479
Case
PowerPAK® SO8
Drain current
20.2A
Drain-source voltage
200V
Gate charge
36nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
53.5mΩ
Polarisation
unipolar
Power dissipation
52W
Pulsed drain current
50A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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