Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A VISHAY
Product Code: SIR610DP-T1-RE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 200V; 35.4A; Idm: 80A
Supplier parameters
Product code
SIR610DP-T1-RE3
Case
PowerPAK® SO8
Drain current
35.4A
Drain-source voltage
200V
Gate charge
38nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
33.4mΩ
Polarisation
unipolar
Power dissipation
104W
Pulsed drain current
80A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SIR610DP-T1-RE3
Product ID
U-3116478
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