Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A VISHAY
Product Code: SIR182DP-T1-RE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 117A; Idm: 200A
Supplier parameters
Product code
SIR182DP-T1-RE3
Brand
VISHAY
Supplier's product code
SIR182DP-T1-RE3
Product ID
U-3116436
Case
PowerPAK® SO8
Drain current
117A
Drain-source voltage
60V
Gate charge
64nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
3.8mΩ
Polarisation
unipolar
Power dissipation
69.4W
Pulsed drain current
200A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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