Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W VISHAY
Product Code: SIHU2N80E-GE3
Brand
More similar products
Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 1.8A; Idm: 5A; 62.5W
Supplier parameters
Brand
VISHAY
Supplier's product code
SIHU2N80E-GE3
Product ID
U-3046085
Case
IPAK
Drain current
1.8A
Drain-source voltage
800V
Gate charge
19.6nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
2.75Ω
Polarisation
unipolar
Power dissipation
62.5W
Pulsed drain current
5A
Type of transistor
N-MOSFET
Unit price
No
Product code
SIHU2N80E-GE3
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .
