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Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC VISHAY

Product Code: SIHG039N60E-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC VISHAY

Specifications

SKU
U-3045949
Brand
Product code
SIHG039N60E-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 600V; 40A; Idm: 199A; 357W; TO247AC

Supplier parameters

Product code
SIHG039N60E-GE3
Brand
VISHAY
Supplier's product code
SIHG039N60E-GE3
Product ID
U-3045949
Case
TO247AC
Drain current
40A
Drain-source voltage
600V
Gate charge
126nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tube
Manufacturer
VISHAY
Mounting
THT
On-state resistance
39mΩ
Polarisation
unipolar
Power dissipation
357W
Pulsed drain current
199A
Type of transistor
N-MOSFET
Unit price
No
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