381 000 products sold on & eBay. Find out more

Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W VISHAY

Product Code: SIHF610S-GE3
no gallery
no gallery
Brand

Sorry, we no longer have this product.

We recommend choosing from:

Other products in this category

*Total delivery cost will be calculated in the checkout.

Warehouse in Europe

Warehouse in Europe

90% positive feedback

94%+ positive feedback

30 day money back guarantee

30 day money back guarantee

Product description

Brand
Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W VISHAY

Specifications

SKU
U-3045869
Brand
Product code
SIHF610S-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 200V; 2.1A; Idm: 10A; 36W

Supplier parameters

Product code
SIHF610S-GE3
Brand
VISHAY
Supplier's product code
SIHF610S-GE3
Product ID
U-3045869
Case
D2PAK
Drain current
2.1A
Drain-source voltage
200V
Gate charge
8.2nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.5Ω
Polarisation
unipolar
Power dissipation
36W
Pulsed drain current
10A
Type of transistor
N-MOSFET
Unit price
No
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .