Warehouse in Europe
94%+ positive feedback
30 day money back guarantee
Supplier product description
Transistor: N-MOSFET; unipolar; 800V; 13A; Idm: 51A; 208W
Supplier parameters
Product code
SIHB24N80AE-GE3
Case
D2PAK
Drain current
13A
Drain-source voltage
800V
Gate charge
89nC
Gate-source voltage
±30V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
184mΩ
Polarisation
unipolar
Power dissipation
208W
Pulsed drain current
51A
Type of transistor
N-MOSFET
Supplier's product code
SIHB24N80AE-GE3
Product ID
U-3045827
Brand
VISHAY
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .