Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W VISHAY
Product Code: SIA414DJ-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 8V; 12A; Idm: 40A; 19W
Supplier parameters
Product code
SIA414DJ-T1-GE3
Brand
VISHAY
Supplier's product code
SIA414DJ-T1-GE3
Product ID
U-3116294
Drain current
12A
Drain-source voltage
8V
Gate charge
32nC
Gate-source voltage
±5V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
41mΩ
Polarisation
unipolar
Power dissipation
19W
Pulsed drain current
40A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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