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Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 INFINEON TECHNOLOGIES

Product Code: IPD65R950CFDBTMA1
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Product description

INFINEON
Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3 INFINEON TECHNOLOGIES

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Specifications

SKU
U-216888
Product code
IPD65R950CFDBTMA1

Supplier product description

Transistor: N-MOSFET; unipolar; 650V; 3.9A; 36.7W; PG-TO252-3

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Supplier parameters

Supplier's product code
IPD65R950CFDBTMA1
Product ID
U-216888
#Promotion
aac_202202
Case
PG-TO252-3
Drain current
3.9A
Drain-source voltage
650V
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
0.95Ω
Polarisation
unipolar
Power dissipation
36.7W
Technology
CoolMOSâ„¢
Type of transistor
N-MOSFET
Unit price
No
Product code
IPD65R950CFDBTMA1
Brand
INFINEON
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .