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Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 PanJit Semiconductor

Product Code: PJW4N06A-R2
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Product description

Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 PanJit Semiconductor

Specifications

SKU
U-4041953
Product code
PJW4N06A-R2

Supplier product description

Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223

Supplier parameters

Product code
PJW4N06A-R2
Case
SOT223
Drain current
4A
Drain-source voltage
60V
Gate charge
5.1nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
PanJit Semiconductor
Mounting
SMD
On-state resistance
0.11Ω
Polarisation
unipolar
Power dissipation
3.1W
Pulsed drain current
8A
Type of transistor
N-MOSFET
Unit price
No
Supplier's product code
PJW4N06A-R2
Product ID
U-4041953
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .