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Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 VISHAY

Product Code: SI2308CDS-T1-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23 VISHAY

Specifications

SKU
U-3825392
Brand
Product code
SI2308CDS-T1-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 60V; 2.6A; Idm: 6A; 1W; SOT23

Supplier parameters

Product code
SI2308CDS-T1-GE3
Supplier's product code
SI2308CDS-T1-GE3
Product ID
U-3825392
#Promotion
aac_202202
Case
SOT23
Drain current
2.6A
Drain-source voltage
60V
Gate charge
4nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
144mΩ
Polarisation
unipolar
Power dissipation
1W
Pulsed drain current
6A
Type of transistor
N-MOSFET
Unit price
No
Brand
VISHAY
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