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Transistor: N-MOSFET; Trench; unipolar; 60V; 1.9A; Idm: 12A; 1.6W NEXPERIA

Product Code: PMPB85ENEAX
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Product description

Transistor: N-MOSFET; Trench; unipolar; 60V; 1.9A; Idm: 12A; 1.6W NEXPERIA

Useful information


Specifications

SKU
U-292010
Product code
PMPB85ENEAX

Supplier product description

Transistor: N-MOSFET; Trench; unipolar; 60V; 1.9A; Idm: 12A; 1.6W

Useful information

Supplier parameters

Product code
PMPB85ENEAX
Case
DFN2020MD-6
Drain current
1.9A
Drain-source voltage
60V
Gate charge
9.2nC
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
0.175Ω
Polarisation
unipolar
Power dissipation
1.6W
Pulsed drain current
12A
Technology
Trench
Type of transistor
N-MOSFET
Brand
NEXPERIA
Supplier's product code
PMPB85ENEAX
Product ID
U-292010
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .