Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Product Code: 2N7002BK.215
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Product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Useful information
Specifications
SKU
U-80223
Product code
2N7002BK.215
Supplier product description
Transistor: N-MOSFET; Trench; unipolar; 60V; 0.245A; Idm: 1.2A; 1.2W
Useful information
Supplier parameters
Product code
2N7002BK.215
Supplier's product code
2N7002BK.215
Product ID
U-80223
Case
SOT23
Drain current
0.245A
Drain-source voltage
60V
Features of semiconductor devices
ESD protected gate
Gate charge
0.6nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
NEXPERIA
Mounting
SMD
On-state resistance
2Ω
Polarisation
unipolar
Power dissipation
1.2W
Pulsed drain current
1.2A
Technology
Trench
Type of transistor
N-MOSFET
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