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Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 INFINEON TECHNOLOGIES

Product Code: IPD60R600P7ATMA1
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Product description

INFINEON
Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3 INFINEON TECHNOLOGIES

Specifications

SKU
U-2726621
Product code
IPD60R600P7ATMA1

Supplier product description

Transistor: N-MOSFET; unipolar; 600V; 4A; Idm: 16A; 30W; PG-TO252-3

Supplier parameters

Product code
IPD60R600P7ATMA1
Brand
INFINEON
Supplier's product code
IPD60R600P7ATMA1
Product ID
U-2726621
Case
PG-TO252-3
Drain current
4A
Drain-source voltage
600V
Features of semiconductor devices
ESD protected gate
Gate charge
9nC
Gate-source voltage
±20V
Kind of channel
enhanced
Manufacturer
INFINEON TECHNOLOGIES
Mounting
SMD
On-state resistance
0.6Ω
Polarisation
unipolar
Power dissipation
30W
Pulsed drain current
16A
Technology
CoolMOSâ„¢ P7
Type of transistor
N-MOSFET
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .