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Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 110A; 2.5W; SO8 ONSEMI

Product Code: FDS8896
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Product description

Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 110A; 2.5W; SO8 ONSEMI

Specifications

SKU
U-2721457
Product code
FDS8896

Supplier product description

Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 110A; 2.5W; SO8

Supplier parameters

Product code
FDS8896
Brand
ON SEMICONDUCTOR
Supplier's product code
FDS8896
Product ID
U-2721457
Case
SO8
Drain current
15A
Drain-source voltage
30V
Gate charge
67nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
ONSEMI
Mounting
SMD
On-state resistance
6mΩ
Polarisation
unipolar
Power dissipation
2.5W
Pulsed drain current
110A
Technology
PowerTrench®
Type of transistor
N-MOSFET
Unit price
No
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