Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23 VISHAY
Product Code: SI2312BDS-T1-GE3
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Supplier product description
Transistor: N-MOSFET; unipolar; 20V; 3.9A; Idm: 15A; 0.48W; SOT23
Supplier parameters
Product code
SI2312BDS-T1-GE3
Brand
VISHAY
Supplier's product code
SI2312BDS-T1-GE3
Product ID
U-3126027
Case
SOT23
Drain current
3.9A
Drain-source voltage
20V
Gate charge
12nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
31mΩ
Polarisation
unipolar
Power dissipation
0.48W
Pulsed drain current
15A
Type of transistor
N-MOSFET
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