Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70 VISHAY
Product Code: SI1922EDH-T1-GE3
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Supplier product description
Transistor: N-MOSFET; unipolar; 20V; 1.3A; Idm: 4A; 0.8W; SC70
Supplier parameters
Product code
SI1922EDH-T1-GE3
Product ID
U-3825390
Case
SC70
Drain current
1.3A
Drain-source voltage
20V
Features of semiconductor devices
ESD protected gate
Gate charge
2.5nC
Gate-source voltage
±8V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
198mΩ
Polarisation
unipolar
Power dissipation
0.8W
Pulsed drain current
4A
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SI1922EDH-T1-GE3
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