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Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W VISHAY

Product Code: SIA456DJ-T1-GE3
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Product description

Brand
Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W VISHAY

Specifications

SKU
U-3807694
Brand
Product code
SIA456DJ-T1-GE3

Supplier product description

Transistor: N-MOSFET; unipolar; 200V; 2.6A; Idm: 2A; 12W

Supplier parameters

Product code
SIA456DJ-T1-GE3
Case
PowerPAK® SC70
Drain current
2.6A
Drain-source voltage
200V
Gate charge
14.5nC
Gate-source voltage
±16V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
1.38Ω
Polarisation
unipolar
Power dissipation
12W
Pulsed drain current
2A
Type of transistor
N-MOSFET
Brand
VISHAY
Supplier's product code
SIA456DJ-T1-GE3
Product ID
U-3807694
The information that supplier provides may differ from the actual product. If you noticed an error please let us know by email: .