Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A VISHAY
Product Code: SI2316BDS-T1-GE3
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Supplier product description
Transistor: N-MOSFET; TrenchFET®; unipolar; 30V; 4.5A; Idm: 20A
Supplier parameters
Product code
SI2316BDS-T1-GE3
Product ID
U-3733668
Brand
VISHAY
Supplier's product code
SI2316BDS-T1-GE3
Case
SOT23
Drain current
4.5A
Drain-source voltage
30V
Gate charge
9.6nC
Gate-source voltage
±20V
Kind of channel
enhanced
Kind of package
tape
Manufacturer
VISHAY
Mounting
SMD
On-state resistance
80mΩ
Polarisation
unipolar
Power dissipation
1.66W
Pulsed drain current
20A
Technology
TrenchFET®
Type of transistor
N-MOSFET
Unit price
No
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